PART |
Description |
Maker |
STW9C2SA |
Thermally Enhanced Package Design
|
Seoul Semiconductor
|
ACS709V |
High Bandwidth, Fast Fault Response Current Sensor IC In Thermally Enhanced Package High Bandwidth, Fast Fault Response Current Sensor IC In Thermally Enhanced Package
|
Allegro MicroSystems
|
PTFA181001GL |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies
|
PXAC192908FV PXAC192908FV-15 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
PXFC192207FH |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
PTF140451E PTF140451F |
Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1450 - 1550 MHz
|
Infineon Technologies AG
|
PTFA260851E PTFA260851F |
Thermally-Enhanced High Power RF LDMOS FET 85 W, 2500 鈥?2700 MHz
|
Infineon Technologies AG
|
PTFA210301E |
Thermally-Enhanced High Power RF LDMOS FET 30 W, 2110-2170 MHz
|
Infineon Technologies AG
|
PTFA210701E PTFA210701F |
Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 鈥?2170 MHz
|
Infineon Technologies AG
|
PTAC210802FCV1R0 |
Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 ?2170 MHz
|
Infineon Technologies A...
|
PTFA081501E PTFA081501F |
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 864-900 MHz
|
Infineon Technologies AG
|